Observing two stage recovery of gate oxide damage created under negative bias temperature stress
نویسندگان
چکیده
negative bias temperature stress Thomas Aichinger, Michael Nelhiebel, Sascha Einspieler, and Tibor Grasser KAI (Kompetenzzentrum Automobil-und Industrieelektronik), Europastrasse 8, 9524 Villach, Austria Infineon Technologies Austria, Siemensstrasse 2, 9500 Villach, Austria Christian Doppler Laboratory for TCAD, Institute for Microelectronics, Technische Universität Wien, Gusshausstrasse 27-29, 1040 Wien, Austria
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